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Silicon ribbon growth via the ribbon-to-ribbon (RTR) technique: Process update and material characterization

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Abstract

The current state of development of the RTR process for silicon ribbon growth is reviewed. Present growth capabilities, material characterization, and device performance are summarized. Specific process problems, such as poor laser coupling efficiencies, are discussed and approaches to their solution are described. Problems related to thermal stresses are discussed in some detail. Stress induced birefringence measurements are used to evaluate residual stresses. A linear temperature profile postheater is effective for reduction of residual stresses. A correlation may be obtained between minority carrier diffusion lengths, dislocation densities, and thermal stress levels.

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Authors and Affiliations

  1. Solar Energy Department, Discrete Semiconductor Division, Motorola Inc., 85008, Phoenix, Arizona

    R. W. Gurtler, A. Baghdadi, R. J. Ellis & I. A. Lesk

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  1. R. W. Gurtler
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  2. A. Baghdadi
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  3. R. J. Ellis
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  4. I. A. Lesk
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Gurtler, R.W., Baghdadi, A., Ellis, R.J. et al. Silicon ribbon growth via the ribbon-to-ribbon (RTR) technique: Process update and material characterization. J. Electron. Mater. 7, 441–477 (1978). https://doi.org/10.1007/BF02655648

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  • DOI: https://doi.org/10.1007/BF02655648

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