ArF excimer laser induced CVD of aluminum oxide films

Abstract

The authors have demonstrated photochemical deposition of aluminum oxides from Trimethylaluminum (TMA) and N₂O by using a pulsed ArF excimer laser (193 nm). Both TMA and N₂O are efficiently photodissociated by the 193 nm light. The films are grown on Si and InP wafers contained in a low pressure flowing cell with a heated substrate. The incident laser beam is focused and parallel to the substrate surface. Typical deposition rates are 80–150 A/min. Stripes of aluminum oxide 30 mm wide are uniformly grown on 7.5 cm Si-wafers. The film composition and purity have been investigated using Auger and Infra-red spectroscopy analysis. Surprising results are the relatively low concentration of carbon. Refractive index and thickness have been determined by an ellipsometer. Typical values for the films are 1.54–1.62. Metal-oxide-semiconductor capacitors have been fabricated and characterized. The C-V curves for n-InP/aluminum oxide have clockwise hysteresis, and minimum loop width is less than 0.5 V. The surface state densities are 1 × 10¹¹ cm^-2 eV⁻¹ at the mid band gap.