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Doping behavior of iodine in Hg0.8Cd0.2Te+

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Abstract

Iodine doped single crystal samples of Hg0.8Cd0.2Te were annealed at temperatures varying from 450 to 600°C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I2, with the iodine being present as donors occupying tellurium lattice sites (ITe) and a fraction being present as (ITeVHg)’ species formed from the iodine on tellurium lattice sites (ITe) pairing with the doubly ionized native acceptor defects (VHg/11). The solubility of the ITe species increases with increase in Hg pressure, whereas that of the (ITeVHg)’ species increases with decrease in Hg

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Authors and Affiliations

  1. Honeywell Electro-Optics Operations, 2 Forbes Road, 02173, Lexington, Massachusetts

    H. R. Vydyanath

  2. Department of Materials Science, University of Southern California, 90007, Los Angeles, California

    F. A. Kröger

Authors
  1. H. R. Vydyanath
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  2. F. A. Kröger
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Additional information

This work was supported by NASA under contract NAS8-33245 pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction have been established

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Vydyanath, H.R., Kröger, F.A. Doping behavior of iodine in Hg0.8Cd0.2Te+ . J. Electron. Mater. 11, 111–131 (1982). https://doi.org/10.1007/BF02654612

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  • DOI: https://doi.org/10.1007/BF02654612

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