Abstract
By using a two-temperature annealing technique to reduce native defect concentrations we have achieved carrier concentrations as low as 5. 6 x l015 cm-3 in bulk single crystals of PbS. Hall coef-ficient, electrical resistivity, thermoelectric power, infrared absorption coefficient, and CO2 laser transmission scan measure-ments were carried out for various samples in the carrier con-centration range from 5. 6 x l015 cm-3 to 4. 8 x 1018 cm-3. The low-temperature carrier concentration data were analyzed using a quantitative theory for the native defect concentrations as a function of the sulfur vapor pressure. Calculations based on this theory yield good agreement with experiment for intrinsic carrier concentration and defect equilibrium coefficient values of 5.5 x 1017 cm-3 and 5. 0 x 1017 cm-3, respectively, at 600°C.
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This work was sponsored by the Department of the Air Force.
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Harman, T.C., Strauss, A.J. Preparation and properties of pbs crystals with low carrier concentrations. J. Electron. Mater. 5, 621–644 (1976). https://doi.org/10.1007/BF02654346
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DOI: https://doi.org/10.1007/BF02654346