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Improvements in the crystalline quality of PbxSn1−xTe crystals grown by vapor transport in a closed system

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Abstract

The quality of PbxSn1−xTe crystals to be used in infrared detectors was improved by elimination or reduction in the number of holes, linear voids, strains and dislocations during growth. This was accomplished by use of stoichiometric or slightly Te-rich charges preheat treated before use to reduce the number of holes. Linear voids and strains were reduced by using constant diameter growth tubes of 25 mm diameter. The number of dislocations was reduced by the use of a slow cooling rate and limited contract with the walls of the growth tube.

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Authors and Affiliations

  1. Texas Instruments Incorporated Central Research Laboratories, 75222, Dallas, Texas

    Sidney G. Parker

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  1. Sidney G. Parker
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Parker, S.G. Improvements in the crystalline quality of PbxSn1−xTe crystals grown by vapor transport in a closed system. J. Electron. Mater. 5, 497–511 (1976). https://doi.org/10.1007/BF02654340

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  • DOI: https://doi.org/10.1007/BF02654340

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