Abstract
In the metalorganic chemical vapor deposition of GaAs there is increasing interest in replacing arsine with a less toxic arsenic source. However, GaAs films grown with metalorganic arsenic reactants usually contain significantly higher levels of carbon than films grown with arsine. Using 50% isotopically enriched13C trimethylarsenic (TMAs), we report the first direct evidence that the methyl groups from TMAs are a major source of the carbon observed in the GaAs films. The measured13C concentration in these films was 5 x 1016 cm.3 Conversely, incorporation of13C was not detected when 99%13C-enriched methane was added to the source gases during growth of GaAs with arsine in place of the13C-TMAs.
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Lum, R.M., Klingert, J.K., Kisker, D.W. et al. Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4 . J. Electron. Mater. 17, 101–104 (1988). https://doi.org/10.1007/BF02652137
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DOI: https://doi.org/10.1007/BF02652137