Abstract
Titanium nitride (TiN) films with 10–15% oxygen incorporation were prepared by direct-current reactive sputtering in a mixture of argon and nitrogen with an electronicgrade titanium target. These TiN films were found to exhibit a tensile stress and a grain size of about 200Å. No degradation in barrier properties was detected by Rutherford backscattering spectroscopy, Auger profiling and x-ray diffraction even after a 30 min 560° C argon anneal. These TiN films formed Schottky barrier diodes on n(100)-Si with nearly ideal barrier properties and a barrier height of 0.55 eV. The conduction mechanism in the TiN/p(100)-Si diodes was found to be quasi-ohmic. A work function of 4.5 eV was obtained for these TiN films.
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Ang, S.S. Titanium nitride films with high oxygen concentration. J. Electron. Mater. 17, 95–100 (1988). https://doi.org/10.1007/BF02652136
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DOI: https://doi.org/10.1007/BF02652136