Abstract
Reflectivity spectra have been measured on LPE Ga1-xInxAs1-ySby, quaternary alloy layers, lattice-matched to InAs and GaSb substrates. The compositions studied were limited by a miscibility gap to the regionsx = 0,y - 1 (GaSb) tox ~ 0.2,y ~ 0.8 andx = 1,y = 0 (InAs) tox ~ 0.9,y ~ 0.1. The spectra were analysed to give values of carrier density and mobility to investigate Te doping. Fory ~ 0.8 layers werep-type as-grown,n-type conduction being obtained for Te concentrations in the melt above about 10-6 at.%. Electron mobility for low carrier densities was found to increase sharply with decreasingy. The lattice vibrational properties of the system were also investigated. Three phonon modes were observed in the composition range studied, with GaAs, InSb and mixed InAs/GaSb characteristics. Thus the behaviour of the system may be termed “three-mode” due to the degeneracy of the GaSb and InAs modes. The oscillator strengths of the observed modes are qualitatively as expected from a comparison with appropriate binary systems.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. G. Astles, H. Hill, A. J. Williams, P. J. Wright and M. L. Young, J. Electron. Mater., this issue.
C. Pickering, J. Phys. C13, 2959 (1980).
C. Pickering, J. Electron. Mater.10, 901 (1981).
I. V. Skryabinskii and Y. I. Ukhanov, Sov. Phys. Solid State14, 2838 (1973).
A. P. Roth and E. Fortin, Can. J. Phys.56, 1468 (1978).
J. Basinski, C. C. Y. Kwan and J. C. Woolley, Can. J. Phys.50, 1068 (1972).
M. H. Brodsky and G. Lucovsky, Phys. Rev. Lett.21, 990 (1968).
B. O. Seraphin and H. E. Bennett, Semiconductors and Semimetals (eds. R. K. Willardson and A. C. Beer) (London: Academic Press, 1967). Vol. 3, p. 499.
C. W. Litton, R. B. Dennis and S. D. Smith, J. Phys. C2, 2146 (1969).
M. L. Young, unpublished results.
P. D. Greene, S. A. Wheeler, A. R. Adams, A. El-Sabbahy and C. N. Ahmad, Appl. Phys. Lett.35, 78 (1979).
M. Hass, Semiconductors and Semimetals (eds. R. K. Willardson and A. C. Beer) (London: Academic Press, 1967) vol. 3, p. 3.
G. Lucovsky and M. F. Chen, Solid State Commun.8,1397 (1970).
G. Lucovsky, M. H. Brodsky, M. F. Chen, R. J. Chicotka and A. T. Ward, Phys. Rev. B4, 1945 (1971).
M. H. Brodsky, G. Lucovsky, M. F. Chen and T. S. Plaskett, Phys. Rev. B2, 3303 (1970).
G. Lucovsky, R. D. Burnham, A. S. Alimanda and H. A. Six, Proc. 12th Int. Conf. Phys. Semicond. (Stuttgart: B. G. Teuber, 1974), p. 326.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Pickering, C. Studies of the Ga1-xI^As1-ySby quaternary alloy system:-II characterisation by far-infrared reflectance spectroscopy. J. Electron. Mater. 15, 51–56 (1986). https://doi.org/10.1007/BF02649950
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02649950