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Adsorption surface energy and crystal growth in lron-3 pct silicon

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Abstract

The effect of surface energy and sulfur adsorption on secondary recrystallization and texture development in thin sheets of Fe-3 pct Si has been delineated. In the absence of adsorbed sulfur, a {110} <uvw> secondary recrystallization texture develops. The influence of sulfur on the surface energy hierarchy of the {100} and {110} planes was determined by observing grain boundary motion in thin bicrystals exposed to controlled gaseous environments. High temperature sulfur adsorption isotherms were obtained from a radioactive tracer study and it was found that sulfur adsorbs preferentially on the {100} plane. The Gibbs adsorption equation was used to analyze this preferential adsorption, demonstrating a reversal in the surface energy hierarchy with the {100} becoming the minimum energy plane. Under these conditions a {100} <uvw> secondary texture develops.

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Authors and Affiliations

  1. University of Delaware, 19711, Newark, Delaware

    Wayne L. Elban (Graduate Student) & John J. Kramer (Professor)

  2. Westinghouse Electric Corporation, Lester, Pennsylvania

    Mohan A. Hebbar

Authors
  1. Wayne L. Elban
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  2. Mohan A. Hebbar
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  3. John J. Kramer
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Formerly Graduate student, University of Delaware.

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Elban, W.L., Hebbar, M.A. & Kramer, J.J. Adsorption surface energy and crystal growth in lron-3 pct silicon. Metall Trans A 6, 1929 (1975). https://doi.org/10.1007/BF02646858

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  • DOI: https://doi.org/10.1007/BF02646858

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