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Mott localization in 1T-TaSxSe2−x investigated by cryogenic STM/STS at 77 K

  • Correlated Electrons
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Czechoslovak Journal of Physics Aims and scope

Abstract

Mott transition in the solid solution of 1T-TaSxSe2−x was investigated by the scanning tunneling microscopy/spectroscopy (STM/STS) at 77 K. For x>1.5, a clear Mott-Hubbard gap structure of ∼0.5 eV, accompanied with two conductance peaks was observed. In TaS1.2Se0.8, on the other hand, it was found that the gap structure was collapsed. The x dependence of the tunneling spectrum is consistent with the Mott transition picture where the density of states near the Fermi level goes to zero with increasing x.

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Authors and Affiliations

  1. Dept. of Superconductivity, University of Tokyo, 7-3-1, Hongo, Bunkyo-Ku, 113, Tokyo, Japan

    O. Shiino, T. Endo, W. Yamaguchi, H. Sugawara, T. Hasegawa & K. Kitazawa

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  1. O. Shiino
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  2. T. Endo
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  3. W. Yamaguchi
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  4. H. Sugawara
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  5. T. Hasegawa
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  6. K. Kitazawa
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Shiino, O., Endo, T., Yamaguchi, W. et al. Mott localization in 1T-TaSxSe2−x investigated by cryogenic STM/STS at 77 K. Czech J Phys 46 (Suppl 5), 2621–2622 (1996). https://doi.org/10.1007/BF02570297

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  • DOI: https://doi.org/10.1007/BF02570297

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