Abstract
Diffusion of impurities is a basic operation in the technology of modern semiconductor devices especially integrated circuits. A knowledge of diffusion parameters such as concentration profile, diffusion depth and diffusion coefficient makes the optimization of a technological process possible. A destructive method of the step-by-step removal of the layers from the silicon single crystal slices irradiated in a nuclear reactor with subsequent determination of impurity contents was used in the diffusion studies of phosphorus, arsenic and gold. Phosphorus was determined by the beta counting of32P after a separation, arsenic and gold were determined by means of a Ge(Li) gamma-ray spectroscopy without any chemical separation. The diffusion of boron was studied by the nondestructive method of the deconvolution of the energy spectrum of prompt alpha radiation from10B(n, α)7Li after thermal neutron irradiation.
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References
S. MAEKAWA, J. Phys. Soc. Japan, 17 (1962) 1592.
R. GERETH, G. H. SCHWULTKE, Appl. Phys. Letters, 8 (1966) 55.
C. F. GIBBONS, Proc. Symp. Silicon Device Processing, CH. P. MARDSEN (Ed.), Maryland, 1970, p. 21.
L. E. KATZ, Proc. Symp. Silicon Device Processing, CH. P. MARDSEN, (Ed.) Maryland, 1970, p. 192.
J. C. IRWIN, Proc. Symp Silicon Device Processing, CH. P. MARDSEN, (Ed.), Maryland, 1970, p. 99.
D. L. KENDALL, D. B. DE VRIES, Semiconductor Silicon, R. R. HABERECHT, E. C. KERN (Eds.), The Electrochemical Society, New York, 1969.
P. E. BAKEMAN, J. M. BORREGO, J. Electrochem. Soc., 117 (1970) 688.
E. LIGEON, A. BONTEMPS, J. Radioanal. Chem., 12 (1972) 335.
Č. JECH, Phys. Stat. Sol., 27 (1968) 573.
E. F. DUFFEK, E. A. BENJAMINI, C. MYLROIE, Electrochem. Technol., 3 (1966) 75.
J. M. H. PAGDEN, G. J. PEARSON, J. M. BEWERS, J. Radioanal. Chem., 8 (1971) 127.
M. ŠIMKOVÁ, V. PINKAS, Isotopenpraxis, 3 (1967) 88.
J. P. CALI, Trace Analysis of Semiconductor Materials, Pergamon, New York, 1964.
J. P. CP DE BEECK, J. Radioanal. Chem., 3 (1969) 431.
W. KERN, RCA Review, 31 (1970) 234.
S. S. MUGHABGHAB, A. I. GARBER, Neutron Cross Sections, Vol. 1, BNL 325, 3rd ed., 1973.
J. KVITEK, J. HOFFMANN, Z. KOSINA, Czech. J. Phys. (in the press).
E. SEGRÉ, Experimental Nuclear Physics, Vol. 1. New York-London, 1953.
L. C. NORTHCLIFFE, R. F. SCHILLING, Nuclear Data Tables, 7A (1970), No. 3–4.
V. F. TURČIN, V. P. KOZLOV, M. S. MALKEVIČ, Usp. Fiz. Nauk, (1970) 102.
J. F. ZIEGLER, G. W. COLE, J. E. E. BAGLIN, J. Appl. Phys., 43 (1972) 3809.
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Kotas, P., Obrusnik, I., Kvitek, J. et al. Study of diffusion of impurities in semiconductor silicon by activation analysis and nuclear reaction methods. J. Radioanal. Chem. 30, 475–488 (1976). https://doi.org/10.1007/BF02516983
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DOI: https://doi.org/10.1007/BF02516983