Abstract
The low field Hall effect in indium at low temperatures is very sensitive to the kind of scatterers introduced. In the presence of small angle dislocation scattering, the Hall coefficientR 0 is positive, while diffuse scattering such as that caused by boundary scattering leads to a negative value forR 0. Data taken on alloys of indium with Ga, Tl, Pb, Sn, Hg, Cd and Bi will be analyzed by comparing them with the dislocation and size effect and by interpreting the differential cross sections of these scatterers in term of their effect onR 0. The behaviour ofR 0 of these alloys in function of temperature is also described.
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van der Mark, W., Ott, H.R., Sargent, D. et al. Influence of scattering on the anisotropy of relaxation time in indium alloys. Phys kondens Materie 9, 63–67 (1969). https://doi.org/10.1007/BF02422533
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DOI: https://doi.org/10.1007/BF02422533