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Preferential site occupation of indium in β-Ga2O3

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Abstract

The hyperfine interactions of111Cd in gallium oxide doped with111In have been studied as a function of temperature (300–1323 K) by means of the time differential perturbed angular correlation technique. The observed hyperfine interactions are assigned to the the β — form of gallium oxide. X-ray diffraction analysis support this conclusion. It is found that indium replace gallium at only one site of both possible sites in the monoclinic β — structure. This site is probably the sixfold corrdinated one. On the other hand, a time dependent interaction is detected at temperatures below 800 K.

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References

  1. A.G. Bibiloni, C.P. Massolo, J. Desimoni, L.A. Mendoza Zélis, F.H. Sánchez, A.F. Pasquevich and A.R. López Garcia. Phys. Rev. B32(1985)2393.

    Article  ADS  Google Scholar 

  2. S. Geller, J. Chem. Phys. 33,676(1960).

    Article  Google Scholar 

  3. Hyung-Gon Kim and Wha-Tek Kim, J. Appl. Phys. 62(1987)2000.

    Article  ADS  Google Scholar 

  4. H.H. Tippins, Phys. Rev. 137A(1965)865.

    Article  ADS  Google Scholar 

  5. R. Büscher and G. Lehmann, Z. Naturforsch 12a(1987)67.

    Google Scholar 

  6. J.M. Trooster and A. Dymanus, Phys. stat. sol. 24(1967)187

    Google Scholar 

  7. CRC Handbook of Chemistry and Physics, ed. R.C. Weast and M.J. Astle (CRC Press, Florida, 1981), p. B102.

    Google Scholar 

  8. N.N. Greenwood and H. Earnshaw, in Chemistry of the elements (Pergamon Press, New York, 1969), p. 278.

    Google Scholar 

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Author notes

  1. A. F. Pasquevich

    Present address: Researcher for CICPBA, (Argentina)

Authors and Affiliations

  1. Departamento de Fisica, UNLP, c.c. 67, 1900, La Plata, Argentina

    A. F. Pasquevich

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  1. A. F. Pasquevich
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Pasquevich, A.F. Preferential site occupation of indium in β-Ga2O3 . Hyperfine Interact 60, 791–794 (1990). https://doi.org/10.1007/BF02399871

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  • DOI: https://doi.org/10.1007/BF02399871

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