Abstract
A study of muons implanted into amorphous hydrogenated silicon (a-Si: H), using both transverse and longitudinal field μSR, is presented. Particular use is made of the muon repolarization curves in longitudinal fields. By comparison with the results of similar measurements on polycrystalline silicon, both the diamagnetic and Mu* fractions are found to be substantially increased. We postulate that weak strained bonds in the amorphous structure are responsible. Little evidence has been found from longitudinal field measurements for isotropic muonium Mu', and a transverse field experiment on a-Si: D suggests that this state might not exist in the amorphous material.
Similar content being viewed by others
References
B.D. Patterson, Rev. Mod Phys. 60 (1988) 69.
T.L. Estle: Hyp. Int., 64 (1990) 525.
H. Simmler, P. Eschle, H. Keller, W. Kündig, W. Odermatt. B.D. Patterson B. Pümpin. I.M. Savić, J.W. Schneider, U. Straumann and P. Truöl. Hyp. Int., this issue.
E. Westhauser, E. Albert, H. Hamma, E. Recknagel, A. Weidinger and P. Moser, Hyp. Int. 32 (1986) 589.
S.R. Kreitzman, T. Pfiz, S. Sun-Mack, J.H. Brewer, T.M. Riseman, D-Ll. Williams and T.L. Estle, Hyp. Int., 64 (1990) 561.
R. Jones. Proc.Chelsea Meeting on Amorphous and Liquid Semiconductors (December 1989), at press: see also PR Briddon and R Jones. Hyp. Int. 64 (1990) 593.
S.F.J. Cox and M.C.R. Symons, Chem. Phys. Lett. 126 (1986) 516.
G.H. Eaton, A. Carne, S.F.J. Cox, J.D. Davies, R. De Renzi, O. Hartmann, A. Kratzer, C. Ristori, C.A. Scott, G.C. Stirling and T. Sundqvist, Nucl. Inst. Meth. A269 (1988) 483.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Cox, S.F.J., Davis, E.A., Hayes, W. et al. A comparative study of muonium states in crystalline and amorphous hydrogenated silicon. Hyperfine Interact 64, 551–560 (1991). https://doi.org/10.1007/BF02396189
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02396189