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Mu to Mu* transition in electron irradiated silicon

  • Muonium in Semiconductors and Insulators
  • Published:
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Abstract

A transition from normal muonium (Mu) to anomalous muonium (Mu*) is observed in electron irradiated silicon. It is suggested that the transformation is induced by the strain field of the defect and takes place some distance away from the defect. The experiment was performed at 15 K.

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Authors and Affiliations

  1. Fakultät für Physik, Universität Konstanz, D 7750, Konstanz, FRG

    E. Westhauser, E. Albert, M. Hamma, E. Recknagel & A. Weidinger

  2. Physique de Solide 85X, CEA-CEN, F-38041, Grenoble, France

    P. Moser

Authors
  1. E. Westhauser
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  2. E. Albert
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  3. M. Hamma
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  4. E. Recknagel
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  5. A. Weidinger
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  6. P. Moser
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Westhauser, E., Albert, E., Hamma, M. et al. Mu to Mu* transition in electron irradiated silicon. Hyperfine Interact 32, 589–593 (1986). https://doi.org/10.1007/BF02394960

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  • DOI: https://doi.org/10.1007/BF02394960

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