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Lattice site location and electronic structure of Te in GaAs

  • Defects and Radiation Damage
  • Defects in Semiconductiors
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Abstract

High purity <100> wafers of GaAs were implanted with radioactive129mTe and stable128Te at 110 keV to total doses of 2×1014 and 2×1015 Te/cm2 respectively and studied with RBS/ channeling and Mössbauer spectroscopy on the 27.8 keV level of129I. After implantation and/or annealing at temperatures between 200–300°C the Mössbauer spectra are dominated by a single line. Channeling reveals an appreciable residual damage in the host lattice, but also points to a substitutional position of the Te atoms. After annealing above ≌500°C, where nearly complete lattice damage recovery is obtained, the Te atoms become defect-associated. The results clearly point to the formation of TeAs−VGa complexes.

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Author notes

  1. Zhang Yi Qun

    Present address: Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, China

Authors and Affiliations

  1. Laboratorium voor Algemene Natuurkunde, Materials Science Centre, University of Groningen, Westersingel 34, 9718 CM, Groningen, The Netherlands

    L. Niesen, D. O. Boerma & Zhang Yi Qun

Authors
  1. L. Niesen
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  2. D. O. Boerma
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  3. Zhang Yi Qun
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Niesen, L., Boerma, D.O. & Qun, Z.Y. Lattice site location and electronic structure of Te in GaAs. Hyperfine Interact 35, 729–734 (1987). https://doi.org/10.1007/BF02394486

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  • DOI: https://doi.org/10.1007/BF02394486

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