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Mössbauer studies with radioactive probes in semiconductors

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Abstract

The extreme sensitivity of Mössbauer spectroscopy to the local atomic and electronic configuration around Mössbauer probes is demonstrated in a number of recent defect configuration studies in semiconductors. The DX-center formation at Te and Sn donor atoms in GaAs is discussed, as well as the behavior of Co and Fe transition metal atoms in Si.

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  1. Instituut voor Kern- en Stralingsfysika, University of Leaven, B-3001, Leuven, Belgium

    G. Langouche

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  1. G. Langouche
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Langouche, G. Mössbauer studies with radioactive probes in semiconductors. Hyperfine Interact 84, 279–287 (1994). https://doi.org/10.1007/BF02060675

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