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Role of the Debye temperature in the lattice thermal conductivity of silicon

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Abstract

This paper is a theoretical study of the effect of the variation in the Debye temperature ΘD with temperature on the lattice thermal conductivity of Si in the temperature range 2–300 K. Expressions for the three-phonon scattering relaxation rates previously proposed by Shermaet al. are used here. The percentage changes in the lattice thermal conductivity due to the Debye temperature for the transverse and the longitudinal phonons are studied separately.

Zusammenfassung

Dieses Manuskript ist eine theoretische Untersuchung des Einflusses der Veränderung der Debey-Temperatur ΘD mit der Temperatur auf die Gitterwärmeleitfähigkeit von Si im Temperaturbereich 2–300 K. Unlängst von Shermaet al. vorgeschlagene Ausdrücke für die drei Phononen-Streuungsrelaxations-Geschwindigkeiten fanden dabei Anwendung. Die prozentuelle Änderung der Gitterwärmeleitfähigkeit in Abhängigkeit von der Debey-Temperatur wurde für transversale als auch für longitudinale Phononen separat untersucht.

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Authors and Affiliations

  1. Department of Physics, College of Education, University of Basrah, Basrah, Iraq

    A. H. Awad & S. N. Shargi

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  1. A. H. Awad
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  2. S. N. Shargi
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Awad, A.H., Shargi, S.N. Role of the Debye temperature in the lattice thermal conductivity of silicon. Journal of Thermal Analysis 37, 277–284 (1991). https://doi.org/10.1007/BF02055930

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  • DOI: https://doi.org/10.1007/BF02055930

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