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Nd: Laser induced absorption in semiconductors and aqueous PrCl3 and NdCl3

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Abstract

The insertion of a multi-photon absorber within a laser cavity has practical importance in providing stabilised laser amplitude and variable pulse duration. We report the relative non-linear absorption coefficients of semiconductors Si, CdSe, CdTe, and GaAs at 1.064μm using a Q-switched Nd:YAG laser. The measurements on Si were carried out from 77 to 450° K, and the results confirm a stepwise process giving rise to induced absorption. The effects of the spatial and temporal distributions of the laser emission on the absolute non-linear coefficient values are briefly discussed. Preliminary observation of stepwise multi-photon absorption in aqueous PrCl3 and NdCl3 measured with a pulsed Nd:glass laser is also reported. The possibility of using a combination of inducible and saturable absorbers, placed within the laser cavity, as a means of providing laser intensities confined to a narrow range centred about a pre-set intensity, is raised.

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Authors and Affiliations

  1. Dunham Laboratory, Yale University, 06520, New Haven, Connecticut, USA

    J. M. Ralston & R. K. Chang

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  1. J. M. Ralston
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  2. R. K. Chang
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Alfred P. Solan Foundation Fellow.

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Ralston, J.M., Chang, R.K. Nd: Laser induced absorption in semiconductors and aqueous PrCl3 and NdCl3 . Opto-electronics 1, 182–188 (1969). https://doi.org/10.1007/BF01834681

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  • DOI: https://doi.org/10.1007/BF01834681

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