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Influence of minority carrier diffusion length in determining the effects of base layer thickness of an n+p silicon solar cell and a BSF cell by numerical analysis

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology, 600 036, Madras, India

    P. Caleb Dhanasekaran & B. S. V. Gopalam

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  1. P. Caleb Dhanasekaran
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  2. B. S. V. Gopalam
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Dhanasekaran, P.C., Gopalam, B.S.V. Influence of minority carrier diffusion length in determining the effects of base layer thickness of an n+p silicon solar cell and a BSF cell by numerical analysis. J Mater Sci Lett 6, 1156–1160 (1987). https://doi.org/10.1007/BF01729168

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  • DOI: https://doi.org/10.1007/BF01729168

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