Abstract
Electroluminescent radiation at p-n junctions and the photovoltaic effect in ZnSe monocrystals were investigated. The p-n junctions were prepared by melting dots of indium on p-type ZnSe (ZnSe contained Cu impurities).
The measurements were made at room temperature and at −150°C. The acceptor level depths estimated from a maximum emission are in accordance with the data in the literature.
The decay time of electroluminescence measured at −150°C is 2·1×10−6 sec. In sunlight a photovoltage of about 1·1 V was observed.
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I wish to thank Prof. Dr A. Jablonski for his interest in this problem.
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Lozykowski, H. Electroluminescence at p-n junctions in ZnSe. Czech J Phys 13, 164–171 (1963). https://doi.org/10.1007/BF01699287
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DOI: https://doi.org/10.1007/BF01699287