Abstract
The shape of the intrinsic absorption edge of the AlN single crystals has been interpreted under assumption of the absorption of Wannier excitons in the electric field predominantly of charged impurities. The best fit of experimental data is obtained forE G6·2–6·3 eV and exciton binding energyR70–80 meV.
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Roskovcová, L., Pastrňák, J. The “Urbach” absorption edge in ALN. Czech J Phys 30, 586–591 (1980). https://doi.org/10.1007/BF01596307
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DOI: https://doi.org/10.1007/BF01596307