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New semiconductors and their possible applications

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Czechoslovak Journal of Physics B Aims and scope

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References

  1. Zbitnew Z., Woolley J. C.: J. Appl. Phys.52 (1981) 6611.

    Google Scholar 

  2. Lendvay E.: Electron. Lett.18 (1982) 407.

    Google Scholar 

  3. Lendvay E.:in Defect Complexes in Semiconductor Structures. Lecture Notes in Phys. Vol. 175, Springer-Verlag, Berlin, p. 163.

  4. Nishitani Y., Akaita K., Yamaguchi A., Kotani T.: J. Electrochem. Soc.127 (1980) 949.

    Google Scholar 

  5. Lendvay E.: J. Cryst. Growth60 (1982) 447.

    Google Scholar 

  6. Kobayashi N., Horikoshi Y.: Jap. J. Appl. Phys.20 (1981) 2301.

    Google Scholar 

  7. Hársy M., Görög T., Lendvay E., Koltai F.: J. Cryst. Growth53 (1981) 234.

    Google Scholar 

  8. Hársy M., Koltai F., Gyuró I., Görög T., Lendvay E.: Acta Phys. Hungar.53 (1982) 113.

    Google Scholar 

  9. Koltai F., Hársy M., Lendvay E.: Cryst. Res. and Technol.18 (1983) 1513.

    Google Scholar 

  10. Lendvay E., Petrás L.:at 7th Int. Conf. on Crystal Growth, Stuttgart, 1983 (Abstr. Vol. p. SY 9/7).

  11. Petrás L., Farkas-Jahnke M., Lendvay E., Kardos J.:at Mater. Int. Diffraction Conf., Györ, 1982.

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Invited talk at the International Conference on Radiative Recombination and Related Phenomena in III–V Compound Semiconductors, Prague, 4–7 October, 1983.

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Lendvay, E. New semiconductors and their possible applications. Czech J Phys 34, 479–484 (1984). https://doi.org/10.1007/BF01590091

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  • DOI: https://doi.org/10.1007/BF01590091

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