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Investigation of a new method to control thin-film growth

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Abstract

Results of investigations of a possible application of RHEED azimuthal plots of characterize in situ epitaxially grown thin films are described. Dynamically calculated and measured azimuthal plots for Si(111) are compared. A set of azimuthal plots experimentally collected at different stages of preparation of a Si/YSi2-x/Si(111)-7×7 layered structure are presented.

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Authors and Affiliations

  1. Department of Experimental Physics, Institute of Physics, Marie-Curie Sklodowska University, pl. M. Curie-Sklodowskiej 1, PE-20-031, Lublin, Poland

    Z. Mitura, P. Marzurek, K. Paprocki & P. Mikolajczak

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  1. Z. Mitura
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  2. P. Marzurek
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  3. K. Paprocki
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  4. P. Mikolajczak
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Mitura, Z., Marzurek, P., Paprocki, K. et al. Investigation of a new method to control thin-film growth. Appl. Phys. A 60, 227–231 (1995). https://doi.org/10.1007/BF01538250

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  • DOI: https://doi.org/10.1007/BF01538250

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