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Temperature dependence of the electric field gradient in CdSe and HfO2

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Zeitschrift für Physik B Condensed Matter

Abstract

The time differential perturbed angular correlation technique was applied to study the electric field gradient in the semiconductor CdSe and the insulator HfO2 at different temperatures. Whereas the semiconductor CdSe shows an increasing quadrupole coupling constant with increasing temperature, the insulator HfO2 exhibits no temperature dependence of the electric field gradient over the whole temperature range investigated.

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References

  1. Barfuß, H., Böhnlein, G., Hohenstein, H., Kreische, W., Niedrig, H., Reimer, A.: Z. Phys. B-Condensed Matter45, 193 (1982)

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Authors and Affiliations

  1. Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-8520, Erlangen, Federal Republic of Germany

    H. Barfuß, G. Böhnlein, H. Hohenstein, W. Kreische & H. Niedrig

  2. Institut für Genetik und für Toxikologie von Spaltstoffen, Kernforschungszentrum Karlsruhe GmbH, Postfach 3640, D-7500, Karlsruhe 1, Federal Republic of Germany

    H. Appel & W. -G. Thies

  3. Institut für Experimentelle Kernphysik, Universität Karlsruhe, Postfach 3640, D-7500, Karlsruhe, Federal Republic of Germany

    H. Appel, R. Heidinger, J. Raudies & G. Then

Authors
  1. H. Barfuß
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  2. G. Böhnlein
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  3. H. Hohenstein
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  4. W. Kreische
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  5. H. Niedrig
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  6. H. Appel
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  7. R. Heidinger
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  8. J. Raudies
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  9. G. Then
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  10. W. -G. Thies
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Barfuß, H., Böhnlein, G., Hohenstein, H. et al. Temperature dependence of the electric field gradient in CdSe and HfO2 . Z. Physik B - Condensed Matter 47, 99–102 (1982). https://doi.org/10.1007/BF01441291

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  • DOI: https://doi.org/10.1007/BF01441291

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