Abstract
In a reactor where the pressure is held constant by expulsion of the gas produced by the reactions, the evolution of the Si-C-O system with temperature occurs in several steps, although the main transformations happen at the univariant points shown in a PRT diagram (pressure,P co/P sio ratio, temperature). The path followed by the system depends on the ratio of reactants initially present in the reactor. When the gas is expelled, the theoretical SiC yield from a C+SiO2 mixture is close to 100%. The Si yield remains low, although it increases rapidly with the imposed pressure. The gas must be recirculated to obtain a higher yield.
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F. DANES, E. SAINT-AMAN and L. COUDURIER,J. Mater. Sci. 28 (1993) 489.
“JANAF thermochemical tables”, 2nd Edn, (National Bureau of Standards, US Department of Communications, Washington, DC, 1971).
J. P. BESSAGUET, Doctoral thesis, INP Grenoble, Grenoble, 1990.
D. H. FILSINGER and D. B. BOURRIE,J. Amer. Ceram. Soc. 73 (1990) 1726.
V. I. BERDNIKOV, V. G. MIZIN and I. V. RYABTCHIKOV,Izv. Vyss. Uceb. Zaved, Cern. Metallurg. 6 (1982) 1.
W. A. KRIVSKY and R. SCHUHMANN Jr,Trans. Metall. Soc. AIME 221 (1961) 898.
O. KUBASCHEWSKY and C. B. ALCOCK, “Metallurgical thermochemistry”, 5th Edn (Pergamon Press, Oxford, 1979).
E. T. TURKDOGAN, “Physical chemistry of high temperature technology”, (Academic Press, New York, 1980).
A. SCHEI and K. LARSEN, 39th Electric Furnace Conference Proceedings, ISS. AIME, Warrendale, PA,39 (1981) 301.
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Danes, F., Saint-aman, E. & Coudurier, L. The Si-C-O system. J Mater Sci 28, 6524–6530 (1993). https://doi.org/10.1007/BF01352224
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DOI: https://doi.org/10.1007/BF01352224