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Low temperature ion beam irradiation of gallium films

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Zeitschrift für Physik B Condensed Matter

Abstract

Ga-films in the amorphous, the β-Ga, and the α-Ga phase have been irradiated at low temperatures with Ar-ions and He-ions at energies 275 keV and 200 keV, respectively. The α-phase can be transformed into the amorphous state by Ar-ion irradiation but not by He-ion irradiation. Rather small Ar-fluences Φ<1014 ions/cm2 are sufficient. The β-phase is stable with respect to irradiation with Ar- and He-ions at small fluences. The as-quench condensed amorphous phase is stable with respect to Ar-ion irradiation, however, it transforms into the β-phase at He-ion irradiation. The different short range order of the α- and β-phase is thought to be responsible for the different behavior at ion irradiation.

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Authors and Affiliations

  1. Physikalisches Institut der Universität Karlsruhe (TH), Engesserstrasse 7, D-7500, Karlsruhe 1, Germany

    U. Görlach, M. Hitzfeld, P. Ziemann & W. Buckel

Authors
  1. U. Görlach
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  2. M. Hitzfeld
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  3. P. Ziemann
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  4. W. Buckel
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This work is dedicated to Professor Dr. S. Methfessel on the occasion of his 60th birthday

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Görlach, U., Hitzfeld, M., Ziemann, P. et al. Low temperature ion beam irradiation of gallium films. Z. Physik B - Condensed Matter 47, 227–232 (1982). https://doi.org/10.1007/BF01318315

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  • DOI: https://doi.org/10.1007/BF01318315

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