Abstract
Ballistic phonon propagation in single-crystalline [001]-oriented gallium arsenide has been studied using low-temperature scanning electron microscopy for imaging. Deviations in the phonon focusing pattern due to dispersion effects were found by comparing the phonon images to theoretical calculations of the long-wavelength limit. The phonon propagation behavior in, samples cut from differently prepared wafers has been investigated. For highly impure crystals we found a pronounced increase of the diffusive signal component at the expense of the ballistic one. Samples with varying dislocation densities also showed a sensitive dependence, of the ballistic phonon propagation on these crystal defects. For focusing calculations considering elastic scattering processes the diffusivity of the phonons could be determined as a function of the mean scattering length. We have found phonon mean free paths of 0.35 mm to 0.80 mm for the various GaAs crystals.
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Held, E., Klein, W. & Huebener, R.P. Characterization of single-crystalline GaAs by imaging with ballistic phonons. Z. Physik B - Condensed Matter 75, 17–29 (1989). https://doi.org/10.1007/BF01313563
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DOI: https://doi.org/10.1007/BF01313563