Abstract
Optoelectronic processes in semiconductors are characterized by a strong coherent coupling between interband and intraband processes at the band edge. An appropriate theoretical framework for studying such processes is provided by the density matrix approach. On the two-point level, which is identical to single-particle quantum kinetic theory, all relevant information is provided by two intraband submatrices and one interband transition amplitude. Equations of motion for these quantities are derived by applying the random phase approximation and thus truncating the kinetic hierarchy. The structure of the resulting equations is discussed.
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Stahl, A. RPA-dynamics of the electronic density matrix in a two-band semiconductor. Z. Physik B - Condensed Matter 72, 371–377 (1988). https://doi.org/10.1007/BF01312824
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DOI: https://doi.org/10.1007/BF01312824