Abstract
A partly phenomenological theory is developed to describe the nonlinear optical properties of laser-excited semiconductors in the spectral vicinity of the fundamental absorption edge under conditions where each optically generated electron-hole pair interacts with the electron-hole plasma. A closed expression for the density- and temperature-dependent absorption spectrum is derived. The resulting equations are evaluated for the example of highly excited GaAs.
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Bányai, L., Koch, S.W. A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors. Z. Physik B - Condensed Matter 63, 283–291 (1986). https://doi.org/10.1007/BF01303807
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DOI: https://doi.org/10.1007/BF01303807