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Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique

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Abstract

The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D SD I =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC eq i D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC eq i andD i are the solubility and diffusivity of interstitial Au in Si.

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Author notes

  1. N. A. Stolwijk & H. Mehrer

    Present address: Institut für Metallforschung, Universität, Domagkstrasse 75, D-4400, Münstar, FR Germany

  2. E. R. Weber

    Present address: Department of Material Science and Mineral Engineering, University of California, 94720, Berkeley, CA, USA

Authors and Affiliations

  1. Institut für Physik, Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, D-7000, Stuttgart 80, Fed. Rep. Germany

    N. A. Stolwijk, J. Hölzl & W. Frank

  2. Abteilung für Metallphysik, Universität, II. Physikalisches Institut, Zülpicher Strasse 77, D-5000, Köln 41, Fed. Rep. Germany

    E. R. Weber

  3. Institut für Theoretische und Angewandte Physik, Universität, Pfaffenwaldring 57, D-7000, Stuttgart 80, Fed. Rep. Germany

    H. Mehrer

Authors
  1. N. A. Stolwijk
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  2. J. Hölzl
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  3. W. Frank
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  4. E. R. Weber
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  5. H. Mehrer
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Stolwijk, N.A., Hölzl, J., Frank, W. et al. Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique. Appl. Phys. A 39, 37–48 (1986). https://doi.org/10.1007/BF01177162

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  • DOI: https://doi.org/10.1007/BF01177162

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