Abstract
It is shown that the strong frequency dependence of the mean free path of thermal phonons in amorphous materials can increase the apparent thermal boundary resistance to these materials by an order of magnitude.
Similar content being viewed by others
References
C. Schmidt,Phys. Lett. 50A, 241 (1974).
C. Schmidt,Cryogenics 15, 17 (1975).
W. A. LittleCan. J. Phys. 37, 334 (1959).
R. E. Peterson and A. C. Anderson,J. Low Temp. Phys. 11, 639 (1973).
S. G. O'Hara and A. C. Anderson,J. Phys. Chem. Solids,35, 1677 (1974).
W. Kappus and O. Weis,J. Appl. Phys. 44, 1947 (1973).
J. D. N. Cheeke, B. Hebral, and C. Martinon,J. de Phys. 34, 257 (1973).
R. O. Pohl, W. F. Love, and R. B. Stephens, inAmorphous and Liquid Semiconductors, J. Stuke and W. Brenig, eds. (Taylor and Francis, London, 1974), p. 1121.
M. P. Zaitlin and A. C. Anderson,Phys. Rev. Lett. 33, 1158 (1974).
M. P. Zaitlin and A. C. Anderson, to be published.
J. D. N. Cheeke,Cryogenics 10, 463 (1970); see also J. D. N. Cheeke and C. Martinon,Solid State Commun. 11, 1771 (1972).
Author information
Authors and Affiliations
Additional information
This research was supported in part by the National Science Foundation under Grant DMR 72-03026.
Rights and permissions
About this article
Cite this article
Reynolds, C.L., Anderson, A.C. Thermal boundary resistance to noncrystalline dielectrics. J Low Temp Phys 21, 641–643 (1975). https://doi.org/10.1007/BF01141615
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01141615