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Preparation of Co-N films by rf-sputtering

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Abstract

Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co2N, Co3N, Co4N and α-Co. Co4N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co4N (1 1 1) plane and α-Co (002) plane parallel to the film surface, respectively. Saturation magnetization σs of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g−1 with increasing content of N from 0 to 21.7 at%, and coercive forceI H c is the range of 43 to 5000e at room temperature.

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Authors and Affiliations

  1. Research Institute for Non-Crystalline Materials, School of Engineering, Okayama University, 700, Okayama, Japan

    Kiichi Oda & Tetsuo Yoshio

  2. Yonago National College of Technology, 683, Yonago, Japan

    Kohei Oda

Authors
  1. Kiichi Oda
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  2. Tetsuo Yoshio
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  3. Kohei Oda
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Oda, K., Yoshio, T. & Oda, K. Preparation of Co-N films by rf-sputtering. J Mater Sci 22, 2729–2733 (1987). https://doi.org/10.1007/BF01086464

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