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Mössbauer studies on the changes of the sites of implanted Te and Sb in silicon

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Reference

  1. G. Weyer, B.I. Deutch, A. Nylandsted-Larsen, J.U. Andersen and H.L. Nielsen, Proc. Int. Conf. on the application of the Mössbauer Effects, Bendor 1974, J. de Phys. 12 (1974) C6-297.

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  1. G. Weyer

    Present address: Institut für Atom-und Festkörperphysik, Frele Universität Berlin, D-1000, Berlin 33

Authors and Affiliations

  1. Institute of Physics, University of Aarhus, DK 8000, Aarhus C, Denmark

    G. Weyer, B. I. Deutch, A. Nylandsted-Larsen & H. L. Nielsen

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  1. G. Weyer
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  2. B. I. Deutch
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  3. A. Nylandsted-Larsen
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  4. H. L. Nielsen
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Weyer, G., Deutch, B.I., Nylandsted-Larsen, A. et al. Mössbauer studies on the changes of the sites of implanted Te and Sb in silicon. Hyperfine Interact 2, 370 (1976). https://doi.org/10.1007/BF01021177

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  • DOI: https://doi.org/10.1007/BF01021177

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