Abstract
An SIS mixer for the 3 mm wavelength band has been developed. It has sufficient RF bandwidth to allow double-sideband operation at an IE of 1.4 GHz. Available gain of around 3 dB has been measured, along with mixer temperatures of 20 to 40K (both double sideband). The junctions were fabricated using a lead-alloy technology (Pb−In−Au/oxide/-Pb−Bi). Coupling and tuning structures were integrated onto a quartz substrate along with the junctions. The measurements were made at physical temperatures around 3.1K, achieved with a closed-cycle refrigerator.
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D'Addario, L.R. An SIS mixer for 90–120 GHz with gain and wide bandwidth. Int J Infrared Milli Waves 5, 1419–1442 (1984). https://doi.org/10.1007/BF01009702
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DOI: https://doi.org/10.1007/BF01009702