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Optical investigations of Zn, Hg and Li doped GaN

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Abstract

The use of infrared quenching of photoluminescence to study the spectral dependence of the photoionization cross-section in GaN doped with Zn, Hg, and Li is reported. It is shown that these impurities produce deep level centres 0.48 eV, 0.41 eV, and 0.75 eV, respectively, above the valence band. In addition, excitation spectra are investigated for Zn and Li doped GaN, giving values of 3.17 eV and 2.86 eV at 78 K for the energy distance of these levels from the conduction band. Finally, from the temperature dependence of the excitation spectra, it is concluded that the levels are probably pinned to the valence band.

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Authors and Affiliations

  1. Department of Solid State Physics, Lund Institute of Technology, University of Lund, Lund, Sweden

    E. Ejder & H. G. Grimmeiss

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  1. E. Ejder
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  2. H. G. Grimmeiss
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Ejder, E., Grimmeiss, H.G. Optical investigations of Zn, Hg and Li doped GaN. Appl. Phys. 5, 275–279 (1974). https://doi.org/10.1007/BF00928140

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  • DOI: https://doi.org/10.1007/BF00928140

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