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Optical determination of free carriers parameters in an epitaxial GaAs layer

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Abstract

The optical perturbation of an infrared wave guided in a GaAs epitaxial layer allows to measure characteristic parameters of free carriers: collision frequency (2·1013 rad·sec−1), depth penetration of induced photopairs (∼2.5μm), relaxation times of free carriers.

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Authors and Affiliations

  1. Laboratoire d'Electrooptique(associé au C.N.R.S. No. 190), Université de Nice, Parc Valrose, F-06034, Nice Cedex, France

    A. Azéma, J. Botineau, F. Gires, A. Saïssy & C. Vanneste

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  1. A. Azéma
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  2. J. Botineau
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  3. F. Gires
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  4. A. Saïssy
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  5. C. Vanneste
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Azéma, A., Botineau, J., Gires, F. et al. Optical determination of free carriers parameters in an epitaxial GaAs layer. Appl. Phys. 9, 47–51 (1976). https://doi.org/10.1007/BF00901908

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  • DOI: https://doi.org/10.1007/BF00901908

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