Abstract
The intrinsic carrier concentration in InSb was determined, between 246 and 370 K, by a helicon method consisting of a microwave interferometer at 34 GHz. The accuracy of the carrier concentration is between 1–2%. The influence of experimental parameters on the determination of the carrier concentration and the mobilities of both electrons and holes is discussed in detail. Comparing the data obtained for the carrier concentration with Hall effect measurements a small difference of the absolute values is found. The band-gap deduced is in agreement with the Hall effect measurements.
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G.Heidegger, H.D.Hess, H.Hinsch: Z. Angew. Phys.31, 127 (1971)
G.Heidegger, H.D.Hess, H.Hinsch: Phys. Letters33A, 462 (1970)
J.K.Furdyna: Rev. Sci. Instr.37, 462 (1966)
R.W.Cunningham, J.B.Gruber: J. Appl. Phys.41, 1804 (1970)
K.K.Chen, J.K.Furdyna:J. Appl. Phys.43, 1825 (1972)
H.J.Hrostowski, F.J.Morin, T.H.Geballe, G.H.Wheatley: Phys. Rev.100, 1672 (1955)
D.P.Morgan: Phys. Stat. Sol.24, 9 (1967)
M.A.Heald, C.B.Wharton:Plasma diagnostics with microwaves (Wiley, New York 1964) pp. 12–56
W.P.Allis, S.J.Buchsbaum, A.Bers:Waves in anisotropic plasmas (MIT Press, Cambridge 1963) pp. 7–24
J.K.Furdyna: Phys. Rev. Letters14, 635 (1965)
E.O.Kane: J. Phys. Chem. Solids1, 249 (1957)
H.Ehrenreich: J. Phys. Chem. Solids2, 131 (1957)
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Bernot, H., Hinsch, H. Determination of the intrinsic carrier concentration in InSb by helicon waves. Appl. Phys. 1, 147–151 (1973). https://doi.org/10.1007/BF00889545
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DOI: https://doi.org/10.1007/BF00889545