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Optoelectronic techniques for ultrafast device network analysis to 700 GHz

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Abstract

Recent advances in state-of-the-art optoelectronic techniques are presented for small-signal electronic device network analysis. The impetus for optoelectronic approaches is given by the severely inadequate bandwidth coverage of existing measurement techniques. Based on a comparison of the trade-offs offered by various optoelectronic techniques, external electrooptic sampling was chosen. Then, the three basic building blocks of an electrooptic characterization system are discussed, which cover the areas of wide-band signal measurement, generation and transmission. The building blocks are subsequently integrated into a complete electrooptic network analyser system capable of active device characterization over a 100 GHz bandwidth. These capabilities are demonstrated on a heterojunction field-effect transistor with a directly-measured maximum frequency of oscillation of 94 GHz. Then, the performance of the electrooptic network analyser is optimized by minimizing transmission line losses, and by improving signal generation and measurement geometries. The resulting system exhibits an unprecedented single-measurement bandwidth of 700 GHz on passive structures. The system performance is verified by comparing measured results with simple models of the measured passive structures.

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  1. Naval Research Laboratory, Code 5670, Washington, DC, 20375, USA

    M. Y. Frankel

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Frankel, M.Y. Optoelectronic techniques for ultrafast device network analysis to 700 GHz. Opt Quant Electron 28, 783–800 (1996). https://doi.org/10.1007/BF00820149

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