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Theoretical analysis of the Hall effect in thin polycrystalline metallic films

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Abstract

In polycrystalline films where three types of scattering processes (background, grainboundaries and external surfaces scatterings) are taking place at the same time an effective relaxation time is defined in the light of a three-dimensional model of grain-boundaries. Analytical expressions for the Hall coefficient and conductivity in thin polycrystalline metallic films subjected to a transverse magnetic field are then derived by using the Boltzmann transport equation. Previously published data can be theoretically interpreted in terms of the proposed model.

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Authors and Affiliations

  1. Laboratoire d'Electronique, Université de Nancy-1, 54037, Nancy, France

    C. R. Pichard & A. J. Tosser

  2. Laboratoire de Chronométrie et Piézoélectricité, Ecole Nationale Supérieure de Mécanique et des Microtechniques, La Bouloie, Route de Gray, 25030, Besancon, France

    C. R. Tellier

Authors
  1. C. R. Pichard
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  2. A. J. Tosser
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  3. C. R. Tellier
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Pichard, C.R., Tosser, A.J. & Tellier, C.R. Theoretical analysis of the Hall effect in thin polycrystalline metallic films. J Mater Sci 16, 451–456 (1981). https://doi.org/10.1007/BF00738636

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  • DOI: https://doi.org/10.1007/BF00738636

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