Summary
Simulation strategies for chemical vapor deposition (CVD) of thin solid films are presented, with emphasis on direct simulation Monte Carlo methods for analyzing and predicting physical phenomena occurring at low pressures and in micron-sized substrate features. The Monte Carlo approach is placed in perspective, relative to standard continuum mechanics-based strategies for modeling of CVD systems. Design issues that may be addressed through the developed methods are exemplified with computations for a new, technologically important CVD process for epitaxy of Si and SixGe1-x alloys. Specifically, radiative heat transfer, rarefied gas-flow characteristics, species separation caused by pressure and thermal diffusion, growth-rate uniformity vs. surface reactivity, and deposition in microscopic features are addressed as parts of the overall CVD reactor-design approach. Process implications of rarefied transport effects unique to very low pressure CVD conditions are described. A new profile evolution technique is also introduced which predicts film topology, as well as the microstructure of the film.
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Coronell, D.G., Jensen, K.F. Monte Carlo simulations of very low pressure chemical vapor deposition. J Computer-Aided Mater Des 1, 3–26 (1993). https://doi.org/10.1007/BF00712813
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DOI: https://doi.org/10.1007/BF00712813