Abstract
p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA cm−2. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm s−1 was obtained in a 1:1:50 HF:HCl:H2O electrolyte.
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Harris, G.L., Fekade, K. & Wongchotigul, K. Anodic etching of p-type cubic silicon carbide. J Mater Sci: Mater Electron 3, 162–163 (1992). https://doi.org/10.1007/BF00695513
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DOI: https://doi.org/10.1007/BF00695513