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Transport and optical properties of hot-wall-grown tin selenide films

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Abstract

Tin selenide (SnSe) films were grown by the hot-wall epitaxy (HWE) technique on glass, mica and KCl substrates. The electrical resistivity and Hall mobility of the films grown on mica and KCl were found to be quite close to the bulk SnSe values. Optical absorption measurements indicated an indirect energy bandgap of about 1 eV and a direct gap of about 1.2 eV.

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  1. J. P. Singh

    Present address: Material Science Laboratory, Department of Applied Sciences, Thapar Institute of Engineering and Technology, 147 001, Patiala, India

Authors and Affiliations

  1. Solid State Research Laboratory, Department of Physics, Guru Nanak Dev University, 143 005, Amritsar, India

    J. P. Singh

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  1. J. P. Singh
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Singh, J.P. Transport and optical properties of hot-wall-grown tin selenide films. J Mater Sci: Mater Electron 2, 105–108 (1991). https://doi.org/10.1007/BF00694760

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  • DOI: https://doi.org/10.1007/BF00694760

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