Abstract
A description is given of the properties and fabrication of a superconductor-semiconductor-superconductor Josephson device based on a novel step-edge technique. This technique allows for careful control of device lengths down to 100 nm. The fabricated devices exhibit high normal-state resistances and surprisingly strong Josephson coupling. The temperature dependence of the measured critical currents suggests that the coherence length in silicon is higher than predicted. The results suggest that silicon barrier devices can perform as well as devices made with other semiconductors with higher mobilities.
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Serfaty, A., Aponte, J. & Octavio, M. Properties of step-edge Pb-Si-Pb Josephson junctions. J Low Temp Phys 63, 23–33 (1986). https://doi.org/10.1007/BF00682062
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DOI: https://doi.org/10.1007/BF00682062