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Superconducting tunneling on Cu x Mo6S8 films

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Abstract

Superconducting tunneling junctions were fabricated on sputtered Cu x Mo6S8 films with Al2O3 and SiO2 barriers. The energy gap was determined by the first derivative measurement. The ratio 2Δo/k B T c obtained in the experiment clearly indicates the strong coupling nature of Cu x Mo6S8. Preliminary results of the second derivative measurements show phonon structure, which agrees reasonably well with inelastic neutron scattering measurements.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, California

    R. Ohtaki, B. R. Zhao & H. L. Luo

Authors
  1. R. Ohtaki
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  2. B. R. Zhao
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  3. H. L. Luo
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Additional information

Work supported by NSF grant DMR 81-08421.

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Ohtaki, R., Zhao, B.R. & Luo, H.L. Superconducting tunneling on Cu x Mo6S8 films. J Low Temp Phys 54, 119–127 (1984). https://doi.org/10.1007/BF00681481

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  • DOI: https://doi.org/10.1007/BF00681481

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