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Kinetics and mechanism of high-temperature oxidation of copper covered by bismuth thin films

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Abstract

The oxidation kinetics of copper covered by thin films of bismuth were studied by TGA, X-ray diffraction, X-ray micro-elemental, coulombmetric methods, and by electron and optical microscopy. At 1003 K catastrophic oxidation of copper coated by bismuth thin films was observed. The parabolic rate constant of copper oxidation (Kp) depends markedly on the thickness of the bismuth film and is more than 1000 times greater than that of bare copper. The mechanism of catastrophic copper oxidation in contact with bismuth is discussed.

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  1. Solid State Physics Chair, Chelyabinsk State University, Russia

    V. V. Belousov

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  1. V. V. Belousov
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Belousov, V.V. Kinetics and mechanism of high-temperature oxidation of copper covered by bismuth thin films. Oxid Met 38, 289–298 (1992). https://doi.org/10.1007/BF00666916

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  • DOI: https://doi.org/10.1007/BF00666916

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