Abstract
The Kapitza thermal boundary resistanceR K has been measured above 1 K on several sapphire-indium boundaries prepared with different methods. By vapor-deposition of indium on sapphire and subsequent cold-welding with bulk indium, reproducible results were obtained. With the indium superconducting, we foundR K⋍T −3 within a certain temperature range, andR K(1K)=42–44 and 30–36 cm2 K/W for polished and rough sapphire surfaces, respectively. The calculation according to the acoustic mismatch theory yieldsR K(1K)≈20 cm2 K/W. Samples prepared by ultrasonic soldering also follow the relationR K⋍T −3 approximately, and giveR K(1K)=14–17 cm2 K/W. However, it is doubtful whether the calculation presuming a smooth boundary can be applied to the latter samples. Furthermore, we found that the method of vapor deposition and subsequent pouring on molten indium does not give good contacts. Moreover, the electronic contribution to the heat transfer across the boundary has been proved by ruling out other effects.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. L. Kapitza,Collected Papers of P. L. Kapitza, D. ter Haar, ed. (Pergamon Press, Oxford, (1967), Vol. II, p. 581.
L. J. Challis,J. Phys. C 7, 481 (1974).
G. L. Pollack,Rev. Mod. Phys. 41, 48 (1969); N. S. Snyder, National Bureau of Standards, Technical Note 385 (1969).
I. M. Khalatnikov,Zh. Eksp. Theor. Fiz. 22, 687 (1952).
A. C. Anderson and W. L. Johnson,J. Low Temp. Phys. 7, 1 (1972).
R. E. Peterson and A. C. Anderson,J. Low Temp. Phys. 11, 639 (1973).
H. Haug and K. Weiss,Phys. Lett. A 40, 19 (1972).
J. L. Opsal and G. L. Pollack,Phys. Lett. 46A, 465 (1974).
J. C. A. van der Sluijs, E. A. Jones, and A. E. Alnaimi,Cryogenics 14, 95 (1974).
W. A. Little,Can. J. Phys. 37, 334 (1959).
D. A. Neeper and J. R. Dillinger,Phys. Rev. 135A, 1028 (1964).
M. W. Wolfmeyer, G. T. Fox, and J. R. Dillinger,Phys. Letters 31A, 401 (1970).
B. S. Park and Y. Narahara,J. Phys. Soc. Japan 30, 760 (1971).
C. Schmidt,Phys. Letters 50A, 241 (1974).
C. Schmidt,J. Appl. Phys. 46, 1372 (1975); L. J. Barnes and J. R. Dillinger,Phys. Rev. 141, 615 (1966).
S. G. O'Hara and A. C. Anderson,J. Phys. Chem. Solids 35, 1677 (1974).
K. W. Garrett and H. M. Rosenberg,J. Phys. D 7, 1247 (1974).
C. Schmidt,Cryogenics 15, 17 (1975).
C. Schmidt, Dissertation, Kernforschungszentrum Karlsruhe, Report No. 2030 (1974).
W. M. Wolfmeyer and J. R. Dillinger,Phys. Letters 34A, 247 (1971).
R. Berman, E. L. Foster, and J. M. Ziman,Proc. Roy. Soc. 220, 171 (1953).
R. Berman,Nature 182, 1661 (1958).
I. N. Adamenko and I. M. Fuks,Soviet Phys.—JETP 32, 1123 (1971).
R. E. Peterson, Ph.D. thesis, University of Illinois, 1972 (unpublished).
B. T. Bernstein,J. Appl. Phys. 34, 169 (1963).
B. S. Chandrasekhar and J. A. Rayne,Phys. Rev. 124, 1011 (1961).
L. J. Challis, K. Dransfeld, and J. Wilks,Proc. Roy. Soc. A 260, 31 (1960).
W. A. Little,Phys. Rev. 123, 435 (1961).
J. D. N. Cheeke,Cryogenics 10, 463 (1970).
P. Lindenfels and H. Rohrer,Phys. Rev. 139A, 206 (1965).
E. S. Bliss and J. A. Rayne,Phys. Letters 23, 38 (1966).
H. Van Kempen, H. N. DeLang, J. S. Lass, and P. Wyder,Phys. Letters 42A, 277 (1972).
L. J. Challis and R. A. Sherlock,J. Phys. C 3, 1193 (1970).
F. Wagner, F. J. Kollarits, and M. Yagub,Phys. Rev. Letters 32, 1117 (1974); F. Wagner and M. Yagub,Phys. Kond. Mat. 19, 337 (1975).
F. W. Sheard, R. M. Bowley, and G. A. Toombs,Phys. Rev. A 8, 3135 (1973).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Schmidt, C., Umlauf, E. Thermal boundary resistance at interfaces between sapphire and indium. J Low Temp Phys 22, 597–611 (1976). https://doi.org/10.1007/BF00659062
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00659062