Abstract
A technique for removing impurities and controlling the metal/chalcogen composition in PbS is reported. It enables large device-grade single crystals to be grown from the vapour phase within the solidus range.
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E. D. Hinkley,Opt. and Quant. Elect. 8 (1976) 155.
H. Preier, M. Bleicher, W. Riedel andH. Maier,J. Appl. Phys. 47 (1976) 5476.
Idem, Appl. Phys. Lett. 28 (1976) 669.
T. C. Harman, J. P. McVittie,J. Elect. Mater. 3 (1974) 843.
S. G. Parker, J. E. Pinnell andR. E. Johnson,ibid 3 (1974) 731.
H. Maier, D. R. Daniel, H. Preier,J. Crystal Growth 35 (1976) 121.
Idem, ibid..
T. C. Harman,J. Nonmetals 1 (1973) 183.
E. M. Swiggard,J. Electrochem. Soc. 114 (1967) 976.
L. Kannapin, J. Luck, P. Möller andW. Szacki,Z. Anal Chemie 271 (1974) 1.
J. Bloem andF. A. Kröger,Z. Phys. Chem. 7 (1956) 15.
A. J. Strauss,J. Elect. Mater. 2 (1973) 553.
T. C. Harman, A. E. Paladino,Solid St. Res. Rept (MIT Lincoln Lab.)4 (1975) 6.
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Maier, H., Daniel, D.R., Herkert, R. et al. Liquid encapsulation zone-refining of PbS. J Mater Sci 13, 297–300 (1978). https://doi.org/10.1007/BF00647773
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DOI: https://doi.org/10.1007/BF00647773