Abstract
We have investigated the reaction of a thin Co film with a (100) Si (Sic) or an evaporated Si (Sie, which is amorphous) substrate during thermal annealing. On either substrate, Co2Si and CoSi form simultaneously and the growth of each phase has a square root of time dependence. Both silicides grow faster on Sic than on Sie. A model is proposed to calculate the effective diffusion constant in each silicide from the growth data of the silicides. The activation energies of the effective diffusion constants in Co2Si and CoSi grown on Sic are 1.7±0.1 eV and 1.8±0.1 eV, respectively; while those on Sie are 1.85±0.1 eV and 1.9 ±0.1 eV, respectively. The differences observed for the two substrates are tentatively attributed to the presence of impurities in Sie and to the microstructural differences of the silicides formed on either substrate.
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