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Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy

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Abstract

We report the results of Hall effect and deep-level-transient-spectroscopy measurements onn-type indium selenide samples cleaved from non-intentionally doped material and from chlorine, tin, gallium sulphide or oxygen doped ingots. Some unidentified shallow and deep levels are found. Impurity levels attributed to Cl (310 meV) and to Sn (44 and 120 meV) are also reported. Anomalous degeneracy of electrons at low temperature is discussed.

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Authors and Affiliations

  1. Departamento de Electricidad y Magnetismo, Facultad de Ciencias Físicas, Burjasot (Valencia), Spain

    A. Segura

  2. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000, Stuttgart 80, Fed. Rep. Germany

    K. Wünstel

  3. Laboratoire de Physique des Milieux très Condensés, 4 Place Jussieu, Tour 13, 4eme étage, F-75005, Paris, France

    A. Chevy

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  1. A. Segura
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  2. K. Wünstel
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  3. A. Chevy
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Segura, A., Wünstel, K. & Chevy, A. Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy. Appl. Phys. A 31, 139–145 (1983). https://doi.org/10.1007/BF00624719

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  • DOI: https://doi.org/10.1007/BF00624719

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